Generation-recombination noise in doped-channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices
Identifieur interne : 00BD40 ( Main/Repository ); précédent : 00BD39; suivant : 00BD41Generation-recombination noise in doped-channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices
Auteurs : RBID : Pascal:03-0519897Descripteurs français
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- 8535B, 7363H, 0707D, 7270, 7350J, 7350G, 7321F, Etude expérimentale, Aluminium composé, Gallium arséniure, Indium composé, Semiconducteur III-V, Dispositif puits quantique, Transducteur effet Hall, Piège électron, Niveau énergie profond, Etat interface, Bruit dispositif semiconducteur, Puits quantique semiconducteur.
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Abstract
The generation-recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noise spectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is associated with DX centers located in the Al0.30Ga0.70As near the heterointerfaces. A detailed analysis of the experimental data further indicates a trap ionization energy of about 250 meV, an electron capture cross section of about σ0≃1×10-11 cm2, and a total integrated defect concentration of about Nts≃1.4×1010 cm-2. © 2003 American Institute of Physics.
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Masselink</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt-Universitat zu Berlin, Newtonstrasse 15, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Department of Physics, Humboldt-Universitat zu Berlin, Newtonstrasse 15, 12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Kostial, H" uniqKey="Kostial H">H. Kostial</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt-Universitat zu Berlin, Newtonstrasse 15, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Department of Physics, Humboldt-Universitat zu Berlin, Newtonstrasse 15, 12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Kissel, H" uniqKey="Kissel H">H. Kissel</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt-Universitat zu Berlin, Newtonstrasse 15, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Department of Physics, Humboldt-Universitat zu Berlin, Newtonstrasse 15, 12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Mazur, Yu I" uniqKey="Mazur Y">Yu. I. Mazur</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Department of Physics, Humboldt-Universitat zu Berlin, Newtonstrasse 15, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Department of Physics, Humboldt-Universitat zu Berlin, Newtonstrasse 15, 12489 Berlin</wicri:regionArea><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0519897</idno><date when="2003-12-15">2003-12-15</date><idno type="stanalyst">PASCAL 03-0519897 AIP</idno><idno type="RBID">Pascal:03-0519897</idno><idno type="wicri:Area/Main/Corpus">00C499</idno><idno type="wicri:Area/Main/Repository">00BD40</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Deep energy levels</term><term>Electron traps</term><term>Experimental study</term><term>Gallium arsenides</term><term>Hall effect transducers</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Quantum well devices</term><term>Semiconductor device noise</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8535B</term><term>7363H</term><term>0707D</term><term>7270</term><term>7350J</term><term>7350G</term><term>7321F</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Dispositif puits quantique</term><term>Transducteur effet Hall</term><term>Piège électron</term><term>Niveau énergie profond</term><term>Etat interface</term><term>Bruit dispositif semiconducteur</term><term>Puits quantique semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The generation-recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noise spectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is associated with DX centers located in the Al<sub>0.30</sub>Ga<sub>0.70</sub>As near the heterointerfaces. A detailed analysis of the experimental data further indicates a trap ionization energy of about 250 meV, an electron capture cross section of about σ<sub>0</sub>≃1×10<sup>-11</sup> cm<sup>2</sup>, and a total integrated defect concentration of about N<sub>ts</sub>≃1.4×10<sup>10</sup> cm<sup>-2</sup>. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Generation-recombination noise in doped-channel Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs/In<sub>0.2</sub>Ga<sub>0.8</sub>As quantum well micro-Hall devices</s1></fA08><fA11 i1="01" i2="1"><s1>KUNETS (Vas. P.)</s1></fA11><fA11 i1="02" i2="1"><s1>MULLER (U.)</s1></fA11><fA11 i1="03" i2="1"><s1>DOBBERT (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>POMRAENKE (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>TARASOV (G. 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I.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Humboldt-Universitat zu Berlin, Newtonstrasse 15, 12489 Berlin, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany</s1></fA14><fA14 i1="03"><s1>Ferdinand-Braun-Institut fur Hochstfrequenztechnik, Albert-Einstein-Strasse 11, 12489 Berlin, Germany</s1></fA14><fA14 i1="04"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1></fA14><fA20><s1>7590-7593</s1></fA20><fA21><s1>2003-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0519897</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The generation-recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noise spectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is associated with DX centers located in the Al<sub>0.30</sub>Ga<sub>0.70</sub>As near the heterointerfaces. A detailed analysis of the experimental data further indicates a trap ionization energy of about 250 meV, an electron capture cross section of about σ<sub>0</sub>≃1×10<sup>-11</sup> cm<sup>2</sup>, and a total integrated defect concentration of about N<sub>ts</sub>≃1.4×10<sup>10</sup> cm<sup>-2</sup>. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F18</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C63H</s0></fC02><fC02 i1="03" i2="3"><s0>001B00G07D</s0></fC02><fC02 i1="04" i2="3"><s0>001B70B70</s0></fC02><fC02 i1="05" i2="3"><s0>001B70C50J</s0></fC02><fC02 i1="06" i2="3"><s0>001B70C50G</s0></fC02><fC02 i1="07" i2="3"><s0>001B70C21F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7363H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>0707D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7270</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7350J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7350G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7321F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Dispositif puits quantique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Quantum well devices</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Transducteur effet Hall</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Hall effect transducers</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Piège électron</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Electron traps</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Niveau énergie profond</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Deep energy levels</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Interface states</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Bruit dispositif semiconducteur</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Semiconductor device noise</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fN21><s1>342</s1></fN21><fN47 i1="01" i2="1"><s0>0348M000114</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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